Electrical and optical properties of mixed titanium and vanadium oxides (Ti–V oxides) thin films have been exploited for their potential use in transparent electronics. Using high energy magnetron sputtering process, sputtering of mosaic Ti–V targetin reactive oxygen plasma was carried out to deposit thin films. 19 at.% of vanadium was found to be incorporated into thin films as revealed by elemental analysis results, and their amorphous behavior was revealed by X-ray diffraction investigations. Though, atomic force microscopy displayed images of a densely packed nanocrystalline structure. Addition of Vanadium has been found to enhance to a large extent, the electrical conduction of prepared Ti–V oxide thin films as compared to the undoped TiO2 and thereby yields p-type electrical conduction.

Resistivity of Ti–V oxides thin films was found to be at the order of 105 Ω cm. According to the optical measurements the average transmission coefficient was found to be about 73% in the visible spectral range and the position of fundamental absorption edge has been shifted by 40 nm towards the longer wavelength as compared to the undoped TiO2. The outcome of the work is indicative of the use of the synthesized Ti–V oxides thin films as p-type transparent oxide semiconductors for future utilization in transparent electronics.

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